Patent · US Active

Semiconductor device including current spread region

US12176396B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Michael Hell · Erlangen, DE
Rudolf Elpelt · Erlangen, DE
Thomas Ganner · Krumpendorf, AT
Caspar Leendertz · Munich, DE

Key dates

Filing date	Dec 7, 2022
Grant date	Dec 24, 2024
Priority date	—
Expiry date	Dec 7, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/146
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.