High critical temperature metal nitride layer with oxide or oxynitride seed layer

US12185643B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Zihao Yang · Santa Clara, US
• Mingwei Zhu · Sunnyvale, US
• Shriram Mangipudi · Santa Clara, US
• Mohammad Kamruzzaman Chowdhury · Santa Clara, US
• Shane Lavan · Palo Alto, US
• Zhebo Chen · San Jose, US
• Yong Cao · Goleta, US
• Nag B. Patibandla · Pleasanton, US

Key dates

• Filing date: Mar 1, 2023
• Grant date: Dec 31, 2024
• Expiry date: Mar 1, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B6/12
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.