Dual RF for controllable film deposition
US12191115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2019 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Nov 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.