Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC
US12198983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2020 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Oct 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.