Fin doping and integrated circuit structures resulting therefrom

US12199098B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Aaron D. Lilak · Beaverton, US
• Cory E. Weber · Portland, US
• Stephen M. Cea · Hillsboro, US
• Leonard C. Pipes · Beaverton, US
• Seahee Hwangbo · Gainesville, US
• Rishabh Mehandru · Portland, US
• Patrick H. Keys · Portland, US
• Jack Yaung · Portland, US
• Tzu-Min Ou · Portland, US

Key dates

• Filing date: Mar 24, 2021
• Grant date: Jan 14, 2025
• Expiry date: May 18, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Fin doping, and integrated circuit structures resulting therefrom, are described. In an example, an integrated circuit structure includes a semiconductor fin. A lower portion of the semiconductor fin includes a region having both N-type dopants and P-type dopants with a net excess of the P-type dopants of at least 2E18 atoms/cm3. A gate stack is over and conformal with an upper portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.