MTJ device performance by adding stress modulation layer to MTJ device structure
US12207566B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | Jul 27, 2023 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunneling junction (MTJ) structure is described. The MJT structure includes a stress modulating layer on a first electrode layer, where a material of the stress modulating layer is different from a material of the first electrode layer. The MJT structure further includes a MTJ material stack on the stress modulating layer. And the MJT structure further includes a second electrode layer on the MTJ material stack. The stress modulating layer reduces crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.