Patent · US Active

Processing chamber deposition confinement

US12211673B2 · kind B2 · utility

0Cited by
3References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 22, 2020
Grant dateJan 28, 2025
Priority date
Expiry dateNov 2, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/3321
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.