Fin field-effect transistor device with low-dimensional material and method

US12211931B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Yi-Tse Hung · Hsinchu, TW
• Chao-Ching Cheng · Hsinchu, TW
• Tse-An Chen · Taoyuan, TW
• Hung-Li Chiang · Taipei, TW
• Tzu-Chiang Chen · Hsinchu, TW
• Lain-Jong Li · Hsinchu, TW

Key dates

• Filing date: Jul 25, 2022
• Grant date: Jan 28, 2025
• Expiry date: Oct 1, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/882

Abstract

A method includes: forming a dielectric fin protruding above a substrate; forming a channel layer over an upper surface of the dielectric fin and along first sidewalls of the dielectric fin, the channel layer including a low dimensional material; forming a gate structure over the channel layer; forming metal source/drain regions on opposing sides of the gate structure; forming a channel enhancement layer over the channel layer; and forming a passivation layer over the gate structure, the metal source/drain regions, and the channel enhancement layer.