Devices including heterogeneous channels, and related memory devices, electronic systems, and methods

US12218236B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Scott E. Sills · Boise, US
• Ramanathan Gandhi · Boise, US
• Durai Vishak Nirmal Ramaswamy · Boise, US
• Yi Fang Lee · Boise, US
• Kamal M. Karda · Boise, US

Key dates

• Filing date: Oct 27, 2022
• Grant date: Feb 4, 2025
• Expiry date: Nov 6, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate electrode laterally neighboring the heterogeneous channel. A device, a method of forming a device, a memory device, and an electronic system are also described.