Patent · US Active

Semiconductor package having a thermally and electrically conductive spacer

US12224222B2 · kind B2 · utility

0Cited by

7References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Neugirg · Regensburg, DE
Adrian Lis · Regensburg, DE
Peter Scherl · Regensburg, DE
Ewald Guenther · Regenstauf, DE

Key dates

Filing date	Jan 11, 2022
Grant date	Feb 11, 2025
Priority date	—
Expiry date	Jan 25, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/48177
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor package includes: a first substrate having a first metallized side; a semiconductor die attached to the first metallized side of the first substrate at a first side of the die, a second side of the die opposite the first side being covered by a passivation, the passivation having a first opening that exposes at least part of a first pad at the second side of the die; a thermally and electrically conductive spacer attached to the part of the first pad that is exposed by the first opening in the passivation, the spacer at least partly overhanging the passivation along at least one side face of the semiconductor die; a second substrate having a first metallized side attached to the spacer at an opposite side of the spacer as the semiconductor die; and an encapsulant encapsulating the semiconductor die and the spacer. Additional spacer embodiments are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.