Method of depositing silicon nitride films
US12230495B2 · kind B2 · utility
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2References
17Claims
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Key dates
| Filing date | Oct 11, 2019 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Aug 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67098
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.