Photoresist topcoat compositions and methods of processing photoresist compositions

US12234369B2 · kind B2 · utility

Assignee

• DuPont Electronic Materials International, LLC · US

Inventors

• Irvinder Kaur · Northborough, US
• Chunyi Wu · Shrewsbury, US
• Joshua Kaitz · Watertown, US
• Mingqi Li · Sammamish, US
• Doris Kang · Shrewsbury, US
• Xisen Hou · Lebanon, US
• Cong Liu · Lanzhou, CN

Key dates

• Filing date: Dec 17, 2018
• Grant date: Feb 25, 2025
• Expiry date: Feb 26, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/32
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.