Manufacturing and reuse of semiconductor substrates

US12249504B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Bernhard Goller · Villach, AT
• Alexander Binter · Villach, AT
• Tobias Franz Wolfgang Hoechbauer · Villach, AT
• Martin Huber · Uttenreuth, DE
• Iris Moder · Villach, AT
• Matteo Piccin · Villach, AT
• Francisco Javier Santos Rodriguez · Villach, AT
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: May 12, 2022
• Grant date: Mar 11, 2025
• Expiry date: Dec 2, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2221/68368
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

pa The method of processing a semiconductor wafer includes forming one or more epitaxial layers over its first main surface. It also involves forming one or more porous layers within the semiconductor wafer or within the epitaxial layers. Together, the semiconductor wafer, the epitaxial layer(s), and the porous layer(s) form a substrate. Next, doped regions of a semiconductor device are formed within the epitaxial layer(s). After forming these doped regions, a non-porous part of the semiconductor wafer is separated from the rest of the substrate along the porous layer(s).