Memory device with fast write mode to mitigate power loss
US12254926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2022 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | May 9, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Implementations described herein relate to a memory device with a fast write mode to mitigate power loss. In some implementations, the memory device may detect a condition associated with power supplied to the memory device. The memory device may detect one or more pending write operations to be performed to cause data to be written to memory cells of the memory device. The memory device may switch from a first voltage pattern, previously used by the memory device to write data to one or more memory cells of the memory device, to a second voltage pattern based on detecting the condition and based on detecting the one or more pending write operations. The memory device may perform at least one write operation, of the one or more pending write operations, using the second voltage pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.