Chemical etch nonvolatile materials for MRAM patterning
US12256645B2 · kind B2 · utility
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2References
23Claims
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Key dates
| Filing date | Jul 20, 2020 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Jan 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface. The substrate is exposed to an activated activation gas to etch at least part of the modified surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.