Atomic layer etching for subtractive metal etch
US12266542B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Feb 7, 2024 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Feb 7, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.