Silicon carbide device with a stripe-shaped trench gate structure

US12266694B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Caspar Leendertz · Munich, DE
• Thomas Basler · Riemerling, DE
• Paul Ellinghaus · Unterhaching, DE
• Rudolf Elpelt · Erlangen, DE
• Michael Hell · Erlangen, DE
• Jens Peter Konrath · Villach, AT
• Shiqin Niu · Freising, DE
• Dethard Peters · Edenkoben, DE
• Konrad Schraml · Weiling, DE
• Bernd Zippelius · Erlangen, DE

Key dates

• Filing date: Dec 28, 2023
• Grant date: Apr 1, 2025
• Expiry date: Dec 28, 2043

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B70/10

Abstract

A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.