Ultra-large area scanning reactive ion etching machine and etching method thereof

US12272530B2 · kind B2 · utility

Assignee

• Institute of Optics and Electronics, Chinese Academy of Sciences · CN

Inventors

• Xiangang Luo · Fremont, US
• Zeyu Zhao · Sichuan, CN
• Yanqin WANG · Sichuan, CN
• Ping Gao · Hong Kong, CN
• Xiaoliang Ma · Port Matilda, US
• Mingbo Pu · Chengdu, CN
• Xiong Li · Allen, US
• Yinghui Guo · Beijing, CN

Key dates

• Filing date: Dec 29, 2018
• Grant date: Apr 8, 2025
• Expiry date: Sep 15, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3341
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.