Dual pressure oxidation method for forming an oxide layer in a feature
US12272531B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 8, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Dec 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.