Contact area size determination between 3D structures in an integrated semiconductor sample

US12283504B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Alex Buxbaum · San Ramon, US
• Amir Avishai · Pleasanton, US
• Dmitry Klochkov · Hinterhochstett, DE
• Thomas Korb · Schwäbisch Gmünd, DE
• Eugen Foca · Lauchheim, DE
• Keumsil Lee · Palo Alto, US

Key dates

• Filing date: Apr 5, 2022
• Grant date: Apr 22, 2025
• Expiry date: May 15, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G06T2207/30148
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, includes the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.