Patent · US Active

FIB-SEM 3D tomography for measuring shape deviations of HAR structures

US12288705B2 · kind B2 · utility

0Cited by

2References

19Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Amir Avishai · Pleasanton, US
Alex Buxbaum · San Ramon, US
Eugen Foca · Lauchheim, DE
Dmitry Klochkov · Hinterhochstett, DE
Thomas Korb · Schwäbisch Gmünd, DE
Keumsil Lee · Palo Alto, US

Key dates

Filing date	Mar 29, 2022
Grant date	Apr 29, 2025
Priority date	—
Expiry date	May 22, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/2817
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A 3D tomographic inspection method for the inspection of semiconductor features in an inspection volume of a semiconductor wafer includes obtaining a 3D tomographic image, and selecting a plurality of 2D cross section images. The method also includes identifying contours of HAR structures, and extracting deviation parameters. The deviation parameters describe fabrication errors such as displacement, deviation in radius or diameter, area or shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.