Parameterizing x-ray scattering measurement using slice-and-image tomographic imaging of semiconductor structures

US12288706B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Hans-Michael Stiepan · Aalen, DE
• Thomas Korb · Schwäbisch Gmünd, DE
• Eugen Foca · Lauchheim, DE
• Alex Buxbaum · San Ramon, US
• Dmitry Klochkov · Hinterhochstett, DE
• Jens Timo Neumann · Shanghai, CN

Key dates

• Filing date: Apr 26, 2022
• Grant date: Apr 29, 2025
• Expiry date: May 21, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G06T2207/30148
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.