Vertical power semiconductor device including silicon carbide (sic) semiconductor body

US12294018B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Aichinger · Faak am See, AT
• Dethard Peters · Edenkoben, DE
• Michael Hell · Erlangen, DE
• Andreas Hürner · Heroldsberg, DE

Key dates

• Filing date: Sep 6, 2024
• Grant date: May 6, 2025
• Expiry date: Sep 6, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device is proposed. The vertical power semiconductor device includes a silicon carbide (SiC) semiconductor body having a first surface and a second surface opposite to the first surface. The SiC semiconductor body includes a transistor cell area comprising gate structures, a gate pad area, and an interconnection area electrically coupling a gate electrode of the gate structures and a gate pad of the gate pad area via a gate interconnection. The vertical power semiconductor device further includes a source or emitter electrode. The vertical power semiconductor device further includes a first interlayer dielectric comprising a first interface to the source or emitter electrode and a second interface to at least one of the gate electrode, or the gate interconnection, or the gate pad, and wherein a conduction band offset at the first interface ranges from 1 eV to 2.5 eV.