Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

US12295140B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jordan D. Greenlee · Boise, US
• Allen McTeer · Meridian, US
• Rita J. Klein · Boise, US
• John D. Hopkins · Meridian, US
• Nancy M. Lomeli · Boise, US
• Xiao Li · Yardley, US
• Alyssa N. Scarbrough · Boise, US
• Jiewei Chen · Boise, US
• Naiming Liu · Boise, US
• Shuangqiang Luo · Boise, US
• Silvia Borsari · Boise, US
• John Mark Meldrim · Boise, US
• Shen Hu · Boise, US

Key dates

• Filing date: Nov 23, 2021
• Grant date: May 6, 2025
• Expiry date: Jul 23, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers in the memory blocks. A through-array-via (TAV) region comprises TAV constructions that extend through the insulative tiers and the conductive tiers. The TAV constructions individually comprise a radially-outer insulative lining and a conductive core radially-inward of the insulative lining. The insulative lining comprises a radially-inner insulative material and a radially-outer insulative material that are of different compositions relative one another. The radially-outer insulative material is in radially-outer recesses that are in the first tiers as compared to the second tiers. The radially-inner insulative material extends elevationally along the insulative tiers and the conductive tiers. Other embodiments, including method, are disclosed.