Etching of polycrystalline semiconductors
US12300500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Sep 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32899
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that includes: performing a cyclic plasma etch process including a plurality of cycles, each of the plurality of cycles including: etching a patterning layer including a polycrystalline semiconductor material to form or extend a recess by exposing the substrate to a first plasma, the substrate including an oxide layer, the patterning layer formed over the oxide layer, exposing the substrate to a second plasma, the second plasma including dihydrogen, and extending the recess by exposing the substrate to a third plasma, the second plasma being different from the first plasma and the third plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.