Patent · US Active

Optical emission spectroscopy for advanced process characterization

US12306044B2 · kind B2 · utility

0Cited by

63References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Sergey Voronin · Delmar, US
Blaze Messer · Albany, US
Yan Chen · Cupertino, US
Joel Ng · Fremont, US
Ashawaraya Shalini · Fremont, US
Ying Zhu · Tangxia, CN
Da Song · Albany, US

Key dates

Filing date	Sep 20, 2022
Grant date	May 20, 2025
Priority date	—
Expiry date	Apr 16, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.