Helium-free silicon formation
US12315724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2021 |
| Grant date | May 27, 2025 |
| Priority date | — |
| Expiry date | Dec 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02507
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary deposition methods may include delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the inert gas. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The processing region may be maintained free of helium delivery during the deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.