Enhanced etch selectivity using halides

US12315733B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Knapp · Mineral Point, US
• Feng Qiao · Tuji, CN
• Hailong Zhou · Milpitas, US
• Junkai He · San Jose, US
• Qian Fu · Pleasanton, US
• Mark Saly · Santa Clara, US
• Jeffrey W. Anthis · San Jose, US
• Jayoung Choi · San Jose, US

Key dates

• Filing date: Feb 1, 2024
• Grant date: May 27, 2025
• Expiry date: Feb 1, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.