Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
US12322443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2022 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Oct 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method used in forming a memory array comprising strings of memory cells comprises forming memory block regions individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a void-space extending laterally-across individual of the memory-block regions. At least one of conductive or semiconductive material is formed in the void-space laterally-outward of individual of the channel-material strings. Conductive molybdenum-containing metal material is formed in the void-space directly against the at least one of the conductive or the semiconductive material and a conductive line comprising the conductive molybdenum-containing metal material is formed therefrom. The at least one of the conductive or the semiconductive material is of different composition from that of the conductive molybdenum-containing metal material. Other embodiments, including structure independent of method, are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.