Chip with a silicon carbide substrate

US12327727B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Krivec · Villach, AT
• Ronny Kern · Finkenstein, AT
• Stefan Kramp · Villach, AT
• Gregor Langer · Klagenfurt, AT
• Hannes Winkler · Villach, AT
• Stefan Woehlert · Villach, AT

Key dates

• Filing date: Aug 31, 2023
• Grant date: Jun 10, 2025
• Expiry date: Aug 31, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/233
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A chip is provided. In an embodiment, the chip includes a silicon carbide substrate, a first sputtered metal layer on the silicon carbide substrate, and at least one second sputtered metal layer on the first sputtered metal layer. The first sputtered metal layer and the at least one second sputtered metal layer form an electrical contact. In another embodiment, the chip includes a silicon carbide substrate, a nickel-silicon layer on the silicon carbide substrate, and a layer sequence including a titanium layer, a nickel-containing layer, and a gold-tin or silver layer on the nickel-silicon layer.