Apparatus and method for processing substrate
US12327735B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2020 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Oct 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.