Substrate-less silicon controlled rectifier (SCR) integrated circuit structures

US12328947B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Rui Ma · Naperville, US
• Kalyan C. Kolluru · Portland, US
• Nicholas A. Thomson · Hillsboro, US
• Ayan Kar · Portland, US
• Benjamin Orr · Munich, DE
• Nathan Jack · Forest Grove, US
• Biswajeet Guha · Hillsboro, US
• Brian J. Greene · Wappingers Falls, US
• Chung-Hsun Lin · White Plains, US

Key dates

• Filing date: Jun 24, 2021
• Grant date: Jun 10, 2025
• Expiry date: Oct 12, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/40

Abstract

Substrate-less silicon controlled rectifier (SCR) integrated circuit structures, and methods of fabricating substrate-less silicon controlled rectifier (SCR) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin portion and a second fin portion that meet at a junction. A plurality of gate structures is over the first fin portion and a second fin portion. A plurality of P-type epitaxial structures and N-type epitaxial structures is between corresponding adjacent ones of the plurality of gate structures. Pairs of the P-type epitaxial structures alternate with pairs of the N-type epitaxial structures.