Nicholas A. Thomson
12Patents
2h-index
36Co-inventors
46Inventor score
Filing activity: Jun 20, 2019 → Jan 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11824116B2 | Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact | Electricity | 2 | Active |
| US11908856B2 | Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact | Performing Operations; Transporting | 2 | Active |
| US12317590B2 | Substrate-free integrated circuit structures | Electricity | 0 | Active |
| US12402349B2 | Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact | Electricity | 0 | Active |
| US11652107B2 | Substrate-less FinFET diode architectures with backside metal contact and subfin regions | Electricity | 0 | Active |
| US12328947B2 | Substrate-less silicon controlled rectifier (SCR) integrated circuit structures | Electricity | 0 | Active |
| US11791331B2 | Integrated circuit structures including backside vias | Electricity | 0 | Active |
| US11837641B2 | Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact | Electricity | 0 | Active |
| US12328946B2 | ESD protection decoupled from diffusion | Electricity | 0 | Active |
| US11145732B2 | Field-effect transistors with dual thickness gate dielectrics | Electricity | 0 | Active |
| US12288789B2 | Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact | Performing Operations; Transporting | 0 | Active |
| US12294003B2 | Integrated circuit structures including backside vias | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.