Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

US12331402B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Rachel E. Batzer · Tualatin, US
• Huatan Qiu · Lake Oswego, US
• Bhadri N. Varadarajan · Beaverton, US
• Patrick Breiling · Portland, US
• Bo Gong · Sherwood, US
• Will Schlosser · Tigard, US
• Zhe Gui · Beaverton, US
• Taide Tan · West Linn, US
• Geoffrey Hohn · Portland, US

Key dates

• Filing date: May 31, 2024
• Grant date: Jun 17, 2025
• Expiry date: May 31, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6715
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.