Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

US12332271B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thoralf Kautzsch · Dresden, DE
• Steffen Bieselt · Wehlen, DE
• Heiko Froehlich · Radebeul, DE
• Andre Roeth · Dresden, DE
• Maik Stegemann · Freital, DE
• Mirko Vogt · Dresden, DE
• Bernhard Winkler · Birkenfeld, DE

Key dates

• Filing date: Jun 28, 2022
• Grant date: Jun 17, 2025
• Expiry date: Jul 30, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G01P2015/0828
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.