Integrated flowable low-k gap-fill and plasma treatment
US12334337B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Oct 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (<600° C.), optional film curing, and etch back to form a low-k dielectric film having a dielectric constant, k-value less than 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.