Sidewall passivation for plasma etching
US12334354B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Feb 1, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Sep 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary semiconductor processing methods may include depositing a boron-containing material on the substrate. The boron-containing material may extend along sidewalls of the one or more features in the substrate. The methods may include forming a plasma of an oxygen-containing precursor and contacting the substrate with plasma effluents of the oxygen-containing precursor. The contacting may etch a portion of the one or more features in the substrate. The contacting may oxidize the boron-containing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.