Integration processes utilizing boron-doped silicon materials
US12334358B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 18, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Aug 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.