Method for patterning a substrate using photolithography
US12334391B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Dec 17, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Sep 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for patterning a substrate includes: forming a first photoresist etch mask with an extreme ultraviolet (EUV) lithography process, the first photoresist etch mask including first through openings, the first photoresist etch mask including a metal-based photoresist material; forming a second photoresist etch mask over the first photoresist etch mask, the second photoresist etch mask including second through openings; and forming first openings, through the first and the second photoresist etch masks, in a region of the substrate that vertically overlaps both the first through openings and the second through openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.