Unit specific variable or adaptive metal fill and system and method for the same
US12334396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2023 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Dec 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/3114
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.