Indium-gallium-nitride light emitting diodes with light reflecting mirrors
US12336336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Mar 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.