Optimization using a non-uniform illumination intensity profile
US12339583B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 18, 2020 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Apr 17, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.