Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure
US12342661B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 6, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Aug 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps: a) providing a first stack comprising a GaN or InGaN layer to be porosified and a barrier layer, b) transferring the GaN or InGaN layer to be porosified and the barrier layer to a porosification support, in such a way as to form a second stack, c) forming a mask on the GaN or InGaN layer to be porosified, d) porosifying the GaN or InGaN layer through the mask, e) transferring the GaN or InGaN porosified layer and the barrier layer to a support of interest, f) forming an InGaN layer by epitaxy on the barrier layer, whereby a relaxed epitaxial InGaN layer is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.