Control of processing parameters for substrate polishing with substrate precession

US12343840B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Eric Lau · Santa Clara, US
• Charles C. Garretson · Sunnyvale, US
• Huanbo Zhang · San Jose, US
• Zhize Zhu · Cupertino, US
• Benjamin Cherian · San Jose, US
• Brian J. Brown · Eastleigh, GB
• Thomas H. Osterheld · Mountain View, US

Key dates

• Filing date: Feb 25, 2022
• Grant date: Jul 1, 2025
• Expiry date: Aug 25, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67092
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

Generating a recipe for a polishing process includes receiving a target removal profile that includes a target thickness to remove for a plurality of locations spaced angularly around a center of a substrate, storing a first function providing substrate orientation relative to the carrier head over time, storing a second function defining a polishing rate below a zone of the zone as a function of one or more pressures of one or more zones from a plurality of pressurizable zones of the carrier head that are spaced angularly around the center of the substrate, and for each particular zone of the plurality of zones, calculating a recipe defining a pressure for the particular zone over time. Calculating the recipe includes calculating an expected thickness profile after polishing from the second function defining the polishing rate and the first function providing substrate orientation relative to the zone over time, and applying a minimizing algorithm to reduce a difference between the expected thickness profile and the target thickness profile.