Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
US12344524B2 · kind B2 · utility
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Key dates
| Filing date | Jul 6, 2020 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Dec 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/03001
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.