Substrate processing system including dual ion filter for downstream plasma
US12347650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2024 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Apr 19, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.