Vapor deposition of films comprising molybdenum
US12354877B2 · kind B2 · utility
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196References
24Claims
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Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Aug 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.