Method for forming a handling substrate for a composite structure intended for RF applications and handling substrate
US12362226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2020 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A handle substrate for a composite structure comprises a base substrate including an epitaxial layer of silicon on a monocrystalline silicon wafer obtained by Czochralski pulling, a passivation layer on and in contact with the epitaxial layer of silicon, and a charge-trapping layer on and in contact with the passivation layer. The monocrystalline silicon wafer of the base substrate exhibits a resistivity of between 10 and 500 ohm·cm, while the epitaxial layer of silicon exhibits a resistivity of greater than 2000 ohm·cm and a thickness ranging from 2 to 100 microns. The passivation layer is amorphous or polycrystalline. A method is described for forming such a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.