Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory

US12363918B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Grenouillet · Voiron, FR
• Jean Coignus · Grenoble, FR
• Elisa VIANELLO · Grenoble, FR

Key dates

• Filing date: Nov 2, 2022
• Grant date: Jul 15, 2025
• Expiry date: Feb 2, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method for co-manufacturing a FeRAM and an OxRAM includes depositing a layer of first electrode carried out identically for a zone Z1 and a zone Z2; depositing a layer of hafnium dioxide-based active material carried out identically for Z1 and Z2; depositing a first conductive layer carried out identically for Z1 and Z2; making a mask at Z2, leaving Z1 free; removing the layer at Z1, with Z2 being protected by the mask; removing the mask at Z2; and depositing a second conductive layer in contact with the layer at Z2 and in contact with the layer at Z1, the material of the layer being chosen to create oxygen vacancies in the active layer and depositing a third conductive layer carried out identically for Z1 and Z2.