Method for producing semiconductor apparatus and semiconductor apparatus
US12368107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2021 |
| Grant date | Jul 22, 2025 |
| Priority date | — |
| Expiry date | Sep 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/0655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor apparatus capable of producing a semiconductor apparatus with improved transmission loss characteristic using an interposer substrate in which semiconductor devices formed on a silicon single crystal substrate are connected to each other by a through electrode, the method including: a step of providing the silicon single crystal substrate containing a dopant; a step of forming the semiconductor devices and the through electrode on the silicon single crystal substrate to obtain the interposer substrate; and a step of irradiating a particle beam to at least around a formation part for the through electrode on the silicon single crystal substrate to deactivate the dopant in a region around the formation part for the through electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.